公司能夠研發(fā)擁有自主知識(shí)產(chǎn)權(quán)的4英寸和6英寸VGF法單晶生長(zhǎng)爐，建成了4英寸和6英寸VGF法“零位錯(cuò)”太陽(yáng)能電池用鍺單晶片生產(chǎn)線。
We invented 4’’ & 6’’ VGF monocrystal furnace with independent intellectual property right, and set up a production line of 4’’ & 6’’ zero EPD VGF germanium wafer producing line.
鍺晶片技術(shù)規(guī)格
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生長(zhǎng)方法 Growth Method |
VGF |
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摻雜類型 Dopant |
P型：鎵 p-type: Ga |
N型：砷 n-type: As |
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晶片形狀 Wafer Shape |
圓形（尺寸2、3、4、6英寸） Round (DIA: 2’’, 3’’, 4’’, 6") |
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晶向 Surface Orientation * |
(100)±0.5° |
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* Other Orientations maybe available upon request 其他晶向要求可根據(jù)客戶需求加工 |
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電阻率 Resistivity (Ω.cm) |
根據(jù)客戶要求 As Required |
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位錯(cuò) Etch Pitch Density (cm2) |
≤ 300 |
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厚度 Thickness (μm) |
175±25（或根據(jù)客戶要求） 175±25 (or as required) |
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TTV [P/P] (μm) |
≤ 10 |
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WARP (μm) |
≤ 15 |
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IF** (mm) |
32.5±1 |
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**If needed by customer 根據(jù)客戶需要 |
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主面拋光 Surface |
E/E, P/E, P/G |
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